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| MCR12DCM, MCR12DCN Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features http://onsemi.com * * * * * * Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Packages are Available SCRs 12 AMPERES RMS 600 - 800 VOLTS G A K MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12DCM MCR12DCN On-State RMS Current (180 Conduction Angles; TC = 90C) Average On-State Current (180 Conduction Angles; TC = 90C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 msec) Forward Peak Gate Power (Pulse Width 1.0 msec, TC = 90C) Forward Average Gate Power (t = 8.3 msec, TC = 90C) Forward Peak Gate Current (Pulse Width 1.0 msec, TC = 90C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) IT(AV) ITSM I2t PGM PG(AV) IGM TJ Tstg 12 7.8 100 41 5.0 0.5 2.0 -40 to 125 -40 to 150 A A A A2sec W W A C C YWW R1 2DCxG Value Unit V 12 3 4 DPAK CASE 369C STYLE 4 MARKING DIAGRAM Y WW R12DCx G = Year = Work Week = Device Code x= M or N = Pb-Free Package Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. PIN ASSIGNMENT 1 2 3 4 Cathode Anode Gate Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 1 February, 2006 - Rev. 5 Publication Order Number: MCR12DCM/D MCR12DCM, MCR12DCN THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction-to-Case - Junction-to-Ambient - Junction-to-Ambient (Note 2) Symbol RqJC RqJA RqJA TL Max 2.2 88 80 260 Unit C/W Maximum Lead Temperature for Soldering Purposes (Note 3) C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) ON CHARACTERISTICS Peak Forward On-State Voltage (Note 4) (ITM = 20 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) Gate Non-Trigger Voltage (VD = 12 V, RL = 100 W) Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) Latching Current (VD = 12 V, IG = 20 mA, TJ = 25C) (VD = 12 V, IG = 40 mA, TJ = -40C) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) dv/dt 50 200 - V/ms TJ = 25C TJ = *40C VGT TJ = 25C TJ = *40C VGD TJ = 125C IH TJ = 25C TJ = -40C IL 4.0 - 22 - 40 80 4.0 - 22 - 40 80 mA mA 0.5 - 0.2 0.65 - - 1.0 2.0 - V VTM IGT 2.0 - 7.0 - 20 40 V - 1.3 1.9 V mA TJ = 25C TJ = 125C IDRM, IRRM mA - - - - 0.01 5.0 Symbol Min Typ Max Unit 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8 from case for 10 seconds. 4. Pulse Test: Pulse Width 2.0 msec, Duty Cycle 2%. ORDERING INFORMATION Device MCR12DCMT4 MCR12DCMT4G MCR12DCNT4 MCR12DCNT4G Package DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) Shipping 2500 / Tape and Reel 2500 / Tape and Reel 2500 / Tape and Reel 2500 / Tape and Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MCR12DCM, MCR12DCN Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off-State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off-State Reverse Voltage Peak Reverse Blocking Current Peak On-State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode - + Voltage IDRM at VDRM Forward Blocking Region (off state) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) P(AV) , AVERAGE POWER DISSIPATION (WATTS) 125 120 115 110 16 14 12 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 a 90 60 120 180 a = Conduction Angle a = 30 dc 105 100 95 90 85 0 1.0 a dc a = Conduction Angle a = 30 2.0 3.0 60 4.0 90 5.0 120 6.0 180 7.0 8.0 8.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. On-State Power Dissipation I T, INSTANTANEOUS ON-STATE CURRENT (AMPS) 100 TYPICAL @ TJ = 25C MAXIMUM @ TJ = 125C 10 r(t) , TRANSIENT RESISTANCE (NORMALIZED) 1.0 0.1 ZqJC(t) = RqJC(t)Sr(t) MAXIMUM @ TJ = 25C 1.0 0.1 0 1.0 2.0 3.0 4.0 5.0 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 0.01 0.1 1.0 10 100 1000 10 K t, TIME (ms) Figure 3. On-State Characteristics Figure 4. Transient Thermal Response http://onsemi.com 3 MCR12DCM, MCR12DCN 100 VGT, GATE TRIGGER VOLTAGE (VOLTS) 35 I GT, GATE TRIGGER CURRENT (mA) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 5.0 20 50 65 80 95 110 125 -40 -25 -10 5.0 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) 10 1.0 -40 -25 -10 Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature 100 IH , HOLDING CURRENT (mA) 100 10 IL, LATCHING CURRENT (mA) 5.0 20 35 50 65 80 95 110 125 10 1.0 -40 -25 -10 1.0 -40 -25 -10 5.0 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature 1000 VD = 800 V TJ = 125C STATIC dv/dt (V/ ms) 100 10 100 1000 10 K RGK, GATE-CATHODE RESISTANCE (OHMS) Figure 9. Exponential Static dv/dt versus Gate-Cathode Resistance http://onsemi.com 4 MCR12DCM, MCR12DCN PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- -T- B V R 4 SEATING PLANE C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 MCR12DCM/D |
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